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Hafnium dioxide

dioxohafnium · also: Nbtxr3 · Hafnia · Hafnotrast · Hafnia (HfO2) · Hafnium oxide · Hafnium(IV) oxide

FormulaHfO2
Mol. weight210.488
PubChem CID292779
InChIKeyCJNBYAVZURUTKZ-UHFFFAOYSA-N
SMILESO=[Hf]=O
86,518Patents
87Research papers88 indexed in detail
13,144Patents - last 3 years
9Papers - last 3 years

Who owns the IP

The organizations most actively patenting around this compound, ranked by referenced patent volume.

#AssigneePatents
1Taiwan Semiconductor Manufacturing Co TSMC Ltd6,668
2International Business Machines Corp2,518
3Samsung Electronics Co Ltd2,150
4GlobalFoundries Inc1,692
5Sony Group Corp1,318
6LG Chem Ltd1,274
7Micron Technology Inc1,243
8TDK Corp1,066
9Semiconductor Energy Laboratory Co Ltd945
10General Electric Co936

Explore the full landscape

This preview shows the leading assignees. Cypris reveals the full ownership landscape - every filing entity, filing trends, and portfolio momentum.

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Where innovation is concentrated

Patent classifications ranked by volume reveal the technical domains with the most active filing.

#CodeAreaPatents
1H01LSemiconductor devices28,050
2H10D27,331
3H10P14,996
4H10W10,394
5H10B9,685
6Y02EClimate change mitigation: energy6,946
7C23C6,637
8B82YNanotechnology5,309
9C04B5,040
10H10KOrganic semiconductors / OLEDs4,800

AI mapped opportunity space

This preview shows where patent activity concentrates. Cypris maps the full classification landscape to surface technical whitespace and IP headroom.

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Representative patents

The filings that best characterise the patent activity around this compound, most-referenced first.

TitleYearAssigneeCited by
Lanthanum hafnium oxide dielectrics2007Micron Technology Inc592
Lanthanide oxide / hafnium oxide dielectric layers2007Micron Technology Inc579
Lanthanide oxide / hafnium oxide dielectric layers2007Micron Technology Inc555
Lanthanide oxide / hafnium oxide dielectrics2006Micron Technology Inc107
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures2006GlobalFoundries Inc100

How research activity has moved

Papers published per year for this compound, over the last decade of indexed records.

YearPapers
20167
20175
20188
201911
20202
20216
20221
20233
20246

Who's driving the science

The most-published authors working with this compound, alongside their primary affiliations.

#AuthorAffiliationPapers
1Naeemunnisa Mohamed AnesaryNanobiotix (France)4
2Julie MarillNanobiotix (France)4
3C. Le PéchouxInstitut Gustave Roussy3
4Víctor MorenoHospital Universitario Fundación Jiménez Díaz3
5Sébastien ParisNanobiotix (France)3
6Thierry de BaèreInstitut Gustave Roussy3
7Elsa BorghiNanobiotix (France)3
8Sylvie BonvalotUniversité Paris Sciences et Lettres3
9Markus Andreas SchubertLeibniz Institute for High Performance Microelectronics2
10Eduardo PérezLeibniz Institute for High Performance Microelectronics2

Research leaders

This preview lists the top authors. Cypris surfaces the full researcher landscape, their affiliations, and how scientific influence is shifting.

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The literature that defines it

The most-cited papers anchoring the scientific record for this compound.

Frequently asked questions

Common questions about this compound's patent and research landscape, answered from the underlying data.

What is the molecular formula and weight of hafnium dioxide?

Hafnium dioxide has the molecular formula HfO2 and a molecular weight of 210.488.

Which companies hold the most patents involving hafnium dioxide?

Taiwan Semiconductor Manufacturing Co TSMC Ltd leads with 6,668 patents, followed by International Business Machines Corp with 2,518 patents, and Samsung Electronics Co Ltd with 2,150 patents.

What are the main technology areas covered by hafnium dioxide patents?

The largest patent coverage areas are H01L (28,050 patents), H10D (27,331 patents), and H10P (14,996 patents). Other significant areas include H10W (10,394 patents), H10B (9,685 patents), and C23C (6,637 patents).

How has patent activity for hafnium dioxide changed over recent years?

Patent filings have shown growth from 4,612 in 2019 to a peak of 7,262 in 2023. In the last three years (2022–2024), the compound was covered by 13,144 patents. Paper publications have fluctuated, with 11 papers in 2019 and 6 papers in 2024.

What biomedical applications of hafnium dioxide are represented in the literature?

A major clinical application involves NBTXR3, a hafnium oxide nanoparticle radioenhancer. The paper titled "NBTXR3, a first-in-class radioenhancer hafnium oxide nanoparticle, plus radiotherapy versus radiotherapy alone in patients with locally advanced soft-tissue sarcoma (Act.In.Sarc): a multicentre, phase 2–3, randomised, controlled trial" (2019) and another paper on "First-in-Human Study Testing a New Radioenhancer Using Nanoparticles (NBTXR3) Activated by Radiation Therapy in Patients with Locally Advanced Soft Tissue Sarcomas" (2016) document this therapeutic approach.

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